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| DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PBSS4240V 40 V low VCEsat NPN transistor Product data sheet 2003 Jan 30 NXP Semiconductors Product data sheet 40 V low VCEsat NPN transistor FEATURES * Low collector-emitter saturation voltage VCEsat * High collector current capability IC and ICM * High collector current gain (hFE) at high IC * High efficiency leading to reduced heat generation * Reduced printed-circuit board area requirements. APPLICATIONS * Power management: - DC-DC converter - Supply line switching - Battery charger - LCD back lighting. * Peripheral driver: - Driver in low supply voltage applications (e.g. lamps and LEDs) - Inductive load drivers (e.g. relay, buzzers and motors). DESCRIPTION NPN transistor providing low VCEsat and high current capability in a SOT666 plastic package. PNP complement: PBSS5240V. 1 2 3 PBSS4240V QUICK REFERENCE DATA SYMBOL VCEO IC ICRP RCEsat PINNING PIN 1 2 3 4 5 6 collector collector base emitter collector collector DESCRIPTION PARAMETER collector-emitter voltage collector current (DC) peak collector current equivalent on-resistance MAX. 40 2 2 <190 UNIT V A A m handbook, halfpage 6 5 4 1, 2, 5, 6 3 4 MARKING TYPE NUMBER PBSS4240V MARKING CODE 42 Top view MAM444 Fig.1 Simplified outline (SOT666) and symbol. 2003 Jan 30 2 NXP Semiconductors Product data sheet 40 V low VCEsat NPN transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC ICRP ICM IB IBM Ptot PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) repetitive peak collector current peak collector current base current (DC) peak base current total power dissipation Tamb 25 C; note 3 Tamb 25 C; note 4 Tamb 25 C; note 1 Tamb 25 C; notes 2 and 3 Tstg Tj Tamb Notes 1. Device mounted on a ceramic circuit board, Al2O3, standard footprint. 2. Operated under pulsed conditions: duty cycle 20%, pulse width tp 30 ms. 3. Device mounted on a printed-circuit board, single-sided copper, tinplated, standard footprint. storage temperature junction temperature operating ambient temperature CONDITIONS open emitter open base open collector note 1 note 2 - - - - - - - - - - - - -65 - -65 MIN. PBSS4240V MAX. 40 40 5 2 2 3 300 1 300 500 900 1.2 +150 150 +150 V V V A A A UNIT mA A mW mW mW W C C C 4. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2. THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER thermal resistance from junction to ambient note 1 note 2 note 3 notes 1 and 4 Notes 1. Device mounted on a printed-circuit board, single-sided copper, tinplated, standard footprint. 2. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2. 3. Device mounted on a ceramic circuit board, Al2O3, standard footprint. 4. Operated under pulsed conditions: duty cycle 20%, pulse width tp 30 ms. Soldering The only recommended soldering method is reflow soldering. CONDITIONS VALUE 410 215 140 110 UNIT K/W K/W K/W K/W 2003 Jan 30 3 NXP Semiconductors Product data sheet 40 V low VCEsat NPN transistor CHARACTERISTICS Tamb = 25 C unless otherwise specified. SYMBOL ICBO ICEO IEBO hFE PARAMETER collector-base cut-off current collector-emitter cut-off current emitter-base cut-off current DC current gain CONDITIONS VCB = 40 V; IE = 0 VCB = 40 V; IE = 0; Tamb = 150 C VCE = 30 V; IB = 0 VEB = 5 V; IC = 0 VCE = 5 V; IC = 1 mA VCE = 5 V; IC = 500 mA VCE = 5 V; IC = 1 A VCE = 5 V; IC = 2 A; note 1 VCEsat collector-emitter saturation voltage IC = 100 mA; IB = 1 mA IC = 500 mA; IB = 50 mA IC = 1 A; IB = 100 mA; note 1 IC = 2 A; IB = 200 mA; note 1 RCEsat VBEsat VBEon fT Cc Note 1. Pulse test: tp 300 s; 0.02. equivalent on-resistance base-emitter saturation voltage base-emitter turn-on voltage transition frequency collector capacitance IC = 1 A; IB = 100 mA; note 1 IC = 1 A; IB = 100 mA VCE = 5 V; IC = 1 A IC = 50 mA; VCE = 10 V; f = 100 MHz VCB = 10 V; IE = Ie = 0; f = 1 MHz MIN. - - - - 300 300 200 75 - - - - - - - 150 - PBSS4240V TYP. - - - - - - - - 50 70 150 300 150 - - - - MAX. 100 50 100 100 - 900 - - 75 100 190 400 <190 1.2 1.1 - 10 UNIT nA A nA nA mV mV mV mV m V V MHz pF 2003 Jan 30 4 NXP Semiconductors Product data sheet 40 V low VCEsat NPN transistor PBSS4240V handbook, halfpage 800 MHC471 handbook, halfpage 1.2 MHC472 hFE (1) VBE (V) (1) 600 0.8 (2) (2) 400 (3) (3) 0.4 200 0 10-1 1 10 102 103 104 IC (mA) 0 10-1 1 10 102 103 104 IC (mA) VCE = 5 V. (1) Tamb = 150 C. (2) Tamb = 25 C. (3) Tamb = -55 C. VCE = 5 V. (1) Tamb = -55 C. (2) Tamb = 25 C. (3) Tamb = 150 C. Fig.2 DC current gain as a function of collector current; typical values. Fig.3 Base-emitter voltage as a function of collector current; typical values. 103 handbook, halfpage VCEsat (mV) MHC473 handbook, halfpage 1.2 MHC474 VBEsat (V) 1 (1) 0.8 102 (1) (2) (2) 0.6 (3) (3) 0.4 10 10-1 IC/IB = 20. 1 10 102 103 104 IC (mA) 0.2 10-1 1 10 102 103 104 IC (mA) (1) Tamb = 150 C. (2) Tamb = 25 C. (3) Tamb = -55 C. IC/IB = 20. (1) Tamb = -55 C. (2) Tamb = 25 C. (3) Tamb = 150 C. Fig.4 Collector-emitter saturation voltage as a function of collector current; typical values. Fig.5 Base-emitter saturation voltage as a function of collector current; typical values. 2003 Jan 30 5 NXP Semiconductors Product data sheet 40 V low VCEsat NPN transistor PBSS4240V handbook, halfpage 2 MHC475 IC (A) (1) (2) (3) (4) (5) (6) (7) (8) (9) 103 handbook, halfpage RCEsat () 102 MHC476 1.6 1.2 10 0.8 (10) 1 0.4 (1) (3) (2) 0 0 Tamb = 25 C. (1) (2) (3) (4) IB = 3 mA. IB = 2.7 mA. IB = 2.4 mA. IB = 2.1 mA. (5) (6) (7) (8) IB = 1.8 mA. IB = 1.5 mA. IB = 1.2 mA. IB = 0.9 mA. (9) IB = 0.6 mA. (10) IB = 0.3 mA. 0.4 0.8 1.2 1.6 2 VCE (V) 10-1 10-1 1 10 102 103 104 IC (mA) IC/IB = 20. (1) Tamb = 150 C. (2) Tamb = 25 C. (3) Tamb = -55 C. Fig.7 Fig.6 Collector current as a function of collector-emitter voltage; typical values. Collector-emitter equivalent on-resistance as a function of collector current; typical values. 2003 Jan 30 6 NXP Semiconductors Product data sheet 40 V low VCEsat NPN transistor PACKAGE OUTLINE PBSS4240V Plastic surface mounted package; 6 leads SOT666 D A E X S YS HE 6 5 4 pin 1 index A 1 e1 e 2 bp 3 wMA Lp detail X c 0 1 scale 2 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 0.6 0.5 bp 0.27 0.17 c 0.18 0.08 D 1.7 1.5 E 1.3 1.1 e 1.0 e1 0.5 HE 1.7 1.5 Lp 0.3 0.1 w 0.1 y 0.1 OUTLINE VERSION SOT666 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 01-01-04 01-08-27 2003 Jan 30 7 NXP Semiconductors Product data sheet 40 V low VCEsat NPN transistor DATA SHEET STATUS DOCUMENT STATUS(1) Objective data sheet Preliminary data sheet Product data sheet Notes 1. Please consult the most recently issued document before initiating or completing a design. PRODUCT STATUS(2) Development Qualification Production DEFINITION PBSS4240V This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. DISCLAIMERS General Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Applications Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 2003 Jan 30 8 NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com (c) NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613514/01/pp9 Date of release: 2003 Jan 30 Document order number: 9397 750 10782 |
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